The physical operation of basic modern semiconductor devices and the determination of their internal parameters are discussed in detail. A review of semiconductor physics, including incomplete ionization, carrier lifetimes, and carrier transport, and solutions of continuity equation are presented. Devices include pn junction diodes, metal-oxide-semiconductor capacitors and field-effect transistors. Emphasis is placed on the fundamental mechanisms that contribute to device performance. The interrelationship between device parameters and circuit performance is also discussed.
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2023 |
Semiconductor Devices And Models I (3c)
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2022 |
Semiconductor Devices And Models I (3c)
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2021 |
Semiconductor Devices And Models I (3c)
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2020 |
Semiconductor Devices And Models I (3c)
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2019 |
Semiconductor Devices And Models I (3c)
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2018 |
Semiconductor Devices And Models I (3c)
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2017 |
Semiconductor Devices And Models I (3c)
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2016 |
Semiconductor Devices And Models I (3c)
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2015 |
Semiconductor Devices And Models I (3c)
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2014 |
Semiconductor Devices And Models I (3c)
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2013 |
Semiconductor Devices And Models I (3c)
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2012 |
Semiconductor Devices And Models I (3c)
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2011 |
Semiconductor Devices And Models I (3c)
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2010 |
Semicond Dev & Models I (3c)
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2009 |
Semicond Dev & Models I (3c)
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Semicond Dev & Models I (3c)
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2008 |
Semicond Dev & Models I (3c)
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2007 |
Semicond Dev & Models I (3c)
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Semicond Dev & Models I (3c)
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2006 |
Semicond Dev & Models I (3c)
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Semicond Dev & Models I (3c)
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2005 |
Semicond Dev & Models I (3c)
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2004 |
Semicond Dev & Models I (3c)
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2003 |
Semicond Dev & Models I (3c)
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2002 |
Semicond Dev & Models I (3c)
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2001 |
Semicond Dev & Models I (3c)
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2000 | ||||
1999 |
Semicond Dev & Models I (3c)
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1998 |
Semicond Dev & Models I (3c)
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