This graduate-level course is designed to give students a hands-on experience in the characterization of basic semiconductor devices (diffused resistors, pn junction diodes, Schottky diodes, MOS capacitors, bipolar junction transistors, MOSFETs) in wafer and/or packaged forms. The final project involves the students in a detailed characterization of devices in a specific application (e.g. high-voltage power electronics, submicron ULSI, microwave and wireless).
Spring | Summer | Fall | ||
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(Session 1) | (Session 2) | |||
2023 | ||||
2022 | ||||
2021 | ||||
2020 |
Semiconductor Devise Characterization (3c)
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2019 |
Semiconductor Devise Characterization (3c)
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2018 |
Semiconductor Devise Characterization (3c)
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2017 |
Semiconductor Devise Characterization (3c)
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2016 | ||||
2015 |
Semiconductor Device Char (3c)
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2014 | ||||
2013 | ||||
2012 | ||||
2011 | ||||
2010 | ||||
2009 | ||||
2008 | ||||
2007 |