The physical operation of basic modern semiconductor devices and the determination of their internal parameters are discussed in detail. A review of semiconductor physics, including incomplete ionization, carrier lifetimes, and carrier transport, and solutions of continuity equation are presented. Devices include pn junction diodes, metal-oxide-semiconductor capacitors and field-effect transistors. Emphasis is placed on the fundamental mechanisms that contribute to device performance. The interrelationship between device parameters and circuit performance is also discussed.
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| 2023 |
Semiconductor Devices And Models I (3c)
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| 2022 |
Semiconductor Devices And Models I (3c)
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| 2021 |
Semiconductor Devices And Models I (3c)
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| 2020 |
Semiconductor Devices And Models I (3c)
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| 2019 |
Semiconductor Devices And Models I (3c)
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| 2018 |
Semiconductor Devices And Models I (3c)
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| 2017 |
Semiconductor Devices And Models I (3c)
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| 2016 |
Semiconductor Devices And Models I (3c)
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| 2015 |
Semiconductor Devices And Models I (3c)
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| 2014 |
Semiconductor Devices And Models I (3c)
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| 2013 |
Semiconductor Devices And Models I (3c)
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| 2012 |
Semiconductor Devices And Models I (3c)
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| 2011 |
Semiconductor Devices And Models I (3c)
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| 2010 |
Semicond Dev & Models I (3c)
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| 2009 |
Semicond Dev & Models I (3c)
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Semicond Dev & Models I (3c)
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| 2008 |
Semicond Dev & Models I (3c)
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| 2007 |
Semicond Dev & Models I (3c)
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