Semiconductor Power Devices

ECSE-6260

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, micro plasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor.

3 credits

Past Term Data

Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Spring Summer Fall
(Session 1) (Session 2)
2023
2022
2021
2020
2019
2018
2017
2016
2015
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 2/36
2014
2013
2012
2011
2010
2009
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 2/110
2008
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 10/110
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 1/1
2007
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 2/100
2006
2005
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 14/6720
2004
2003
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 25/5120
2002
Semicond Power Devices (3c)
Seats Taken: 0/1500
2001
Semicond Power Devices (3c)
  • Tat-Sing Chow
Seats Taken: 15/1525
2000
1999
Semicond Power Dev (3c)
  • Tat-Sing Chow
Seats Taken: 14/30
1998