Intro Semiconductor Proc

CHME-4600

The basic processes of fabrication of silicon-based semiconductor devices with emphasis on the chemical principles and systems involved. Topics include materials preparation, oxide growth, lithography, diffusion, ion implantation, epitaxial growth, chemical-vapor deposition, vacuum deposition, reactive ion etching, and packaging technologies. Fabrication of both bipolar and FET devices is discussed with emphasis on manufacturing process flow and control. Process design methodology.

3 credits
Cross-listed with:
Prereqs:
none

Past Term Data

Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Spring Summer Fall
(Session 1) (Session 2)
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 10/25
2005
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 9/25
2004
2003
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 9/30
2002
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 14/30
2001
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 22/35
2000
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 17/40
1999
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 16/50
1998
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 29/50