This graduate-level course is designed to give students a hands-on experience in the characterization of basic semiconductor devices (diffused resistors, pn junction diodes, Schottky diodes, MOS capacitors, bipolar junction transistors, MOSFETs) in wafer and/or packaged forms. The final project involves the students in a detailed characterization of devices in a specific application (e.g. high-voltage power electronics, submicron ULSI, microwave and wireless).
| Spring | Summer | Fall | ||
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| (Session 1) | (Session 2) | |||
| 2023 | ||||
| 2022 | ||||
| 2021 | ||||
| 2020 |
Semiconductor Devise Characterization (3c)
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| 2019 |
Semiconductor Devise Characterization (3c)
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| 2018 |
Semiconductor Devise Characterization (3c)
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| 2017 |
Semiconductor Devise Characterization (3c)
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| 2016 | ||||
| 2015 |
Semiconductor Device Char (3c)
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| 2014 | ||||
| 2013 | ||||
| 2012 | ||||
| 2011 | ||||
| 2010 | ||||
| 2009 | ||||
| 2008 | ||||
| 2007 | ||||