Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single-and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography.
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2023 | ||||
2022 | ||||
2021 | ||||
2020 | ||||
2019 | ||||
2018 | ||||
2017 |
Vlsi Fabrication Tech (3c)
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2016 | ||||
2015 |
Vlsi Fabrication Tech (3c)
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2014 | ||||
2013 | ||||
2012 |
Vlsi Fabrication Tech (3c)
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2011 | ||||
2010 |
Vlsi Fabrication Tech (3c)
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2009 | ||||
2008 |
Vlsi Fabrication Tech (3c)
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2007 | ||||
2006 |
Vlsi Fabrication Tech (3c)
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2005 | ||||
2004 |
Vlsi Fabrication Tech (3c)
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2003 | ||||
2002 |
Vlsi Fabrication Tech (3c)
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2001 | ||||
2000 | ||||
1999 | ||||
1998 |