Semiconductor Devise Characterization

ECSE-6200

This graduate-level course is designed to give students a hands-on experience in the characterization of basic semiconductor devices (diffused resistors, pn junction diodes, Schottky diodes, MOS capacitors, bipolar junction transistors, MOSFETs) in wafer and/or packaged forms. The final project involves the students in a detailed characterization of devices in a specific application (e.g. high-voltage power electronics, submicron ULSI, microwave and wireless).

3 credits
Prereqs:
none

Past Term Data

Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Spring Summer Fall
(Session 1) (Session 2)
2025
Semiconductor Devise Characterization (3c)
  • Tat-Sing Chow
Seats Taken: 5/15
2024
2023
2022
2021
2020
Semiconductor Devise Characterization (3c)
  • Tat-Sing Chow
Seats Taken: 1/36
2019
Semiconductor Devise Characterization (3c)
  • Tat-Sing Chow
Seats Taken: 2/36
2018
Semiconductor Devise Characterization (3c)
  • Tat-Sing Chow
Seats Taken: 2/36
2017
Semiconductor Devise Characterization (3c)
  • Tat-Sing Chow
Seats Taken: 9/36
2016
2015
Semiconductor Device Char (3c)
  • Tat-Sing Chow
Seats Taken: 3/38
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998