Intro Semiconductor Proc

CHME-4600

The basic processes of fabrication of silicon-based semiconductor devices with emphasis on the chemical principles and systems involved. Topics include materials preparation, oxide growth, lithography, diffusion, ion implantation, epitaxial growth, chemical-vapor deposition, vacuum deposition, reactive ion etching, and packaging technologies. Fabrication of both bipolar and FET devices is discussed with emphasis on manufacturing process flow and control. Process design methodology.

3 credits
Prereqs:
none

Past Term Data

Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Spring Summer Fall
(Session 1) (Session 2)
2024
Intro Semiconductor Proc (3c)
Seats Taken: 0/30
2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 10/25
2005
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 9/25
2004
2003
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 9/30
2002
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 14/30
2001
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 22/35
2000
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 17/40
1999
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 16/50
1998
Intro Semiconductor Proc (3c)
  • Timothy Cale
Seats Taken: 29/50