Semiconductor Power Devices

ECSE-6260

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, micro plasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor.

3 credits

Prereqs:

one of:

ECSE-6230 Semiconductor Devices and Models I ECSE-6290 Semiconductor Devices and Models II

Past Term Data

Offered

Not Offered

Offered as Cross-Listing Only

No Term Data

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	Spring	Summer		Fall
		(Session 1)	(Session 2)
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/36
2014
2013
2012
2011
2010
2009	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/110
2008	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 10/110			Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 1/1
2007	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/100
2006
2005	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 14/6720
2004
2003	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 25/5120
2002	Semicond Power Devices (3c) Seats Taken: 0/1500
2001	Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 15/1525
2000
1999	Semicond Power Dev (3c) Tat-Sing Chow Seats Taken: 14/30
1998