# VLSI Fabrication Technology

## ECSE-6240

Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single-and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography.

3 credits
Prereqs:
none

# Past Term Data
Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Simple View
Detailed View

| Spring | Summer | Fall
--- | --- | --- | ---
| (Session 1) | (Session 2) |
2023 |  |  |
2022 |  |  |
2021 |  |  |
2020 |  |  |
2019 |  |  |
2018 |  |  |
2017 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 4/36 |  |
2016 |  |  |
2015 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 7/36 |  |
2014 |  |  |
2013 |  |  |
2012 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 6/36 |  |
2011 |  |  |
2010 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 11/32 |  |
2009 |  |  |
2008 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 7/30 |  |
2007 |  |  |
2006 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 16/25 |  |
2005 |  |  |
2004 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 11/20 |  |
2003 |  |  |
2002 | Vlsi Fabrication Tech (3c) Ishwara B Bhat Seats Taken: 18/40 |  |
2001 |  |  |
2000 |  |  |
1999 |  |  |
1998 |  |  |