# Intro Semiconductor Proc

## CHME-4600

The basic processes of fabrication of silicon-based semiconductor devices with emphasis on the chemical principles and systems involved. Topics include materials preparation, oxide growth, lithography, diffusion, ion implantation, epitaxial growth, chemical-vapor deposition, vacuum deposition, reactive ion etching, and packaging technologies. Fabrication of both bipolar and FET devices is discussed with emphasis on manufacturing process flow and control. Process design methodology.

3 credits
Prereqs:
none

# Past Term Data
Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
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Detailed View

| Spring | Summer | Fall
--- | --- | --- | ---
| (Session 1) | (Session 2) |
2024 |  |  | Intro Semiconductor Proc (3c) Max Oliver Bloomfield Seats Taken: 5/30
2023 |  |  |
2022 |  |  |
2021 |  |  |
2020 |  |  |
2019 |  |  |
2018 |  |  |
2017 |  |  |
2016 |  |  |
2015 |  |  |
2014 |  |  |
2013 |  |  |
2012 |  |  |
2011 |  |  |
2010 |  |  |
2009 |  |  |
2008 |  |  |
2007 |  |  |
2006 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 10/25
2005 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 9/25
2004 |  |  |
2003 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 9/30
2002 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 14/30
2001 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 22/35
2000 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 17/40
1999 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 16/50
1998 |  |  | Intro Semiconductor Proc (3c) Timothy Cale Seats Taken: 29/50