# Semicond Power Devices

## ECSE-6260

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, micro plasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor.

3 credits
Prereqs:
one of:
ECSE-6230 Semiconductor Devices And Models I ECSE-6290 Semiconductor Devices And Models II

# Past Term Data
Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
Simple View
Detailed View

| Spring | Summer | Fall
--- | --- | --- | ---
| (Session 1) | (Session 2) |
2026 |  |  |

2025

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 0/10

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 1/10

2024

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 1/10

2023 |  |  |
2022 |  |  |
2021 |  |  |
2020 |  |  |
2019 |  |  |
2018 |  |  |
2017 |  |  |
2016 |  |  |

2015

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 2/36

2014 |  |  |
2013 |  |  |
2012 |  |  |
2011 |  |  |
2010 |  |  |

2009

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 2/110

2008

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 10/110

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 1/1

2007

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 2/100

2006 |  |  |

2005

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 14/6720

2004 |  |  |

2003

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 25/5120

2002

Semicond Power Devices (3c)

Seats Taken: 0/1500

2001

Semicond Power Devices (3c)

- Tat-Sing Chow

Seats Taken: 15/1525

2000 |  |  |

1999

Semicond Power Dev (3c)

- Tat-Sing Chow

Seats Taken: 14/30

1998 |  |  |