# Semiconductor Power Devices

## ECSE-6260

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, micro plasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor.

3 credits
Prereqs:
one of:
ECSE-6230 Semiconductor Devices and Models I ECSE-6290 Semiconductor Devices and Models II

# Past Term Data
Offered
Not Offered
Offered as Cross-Listing Only
No Term Data
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| Spring | Summer | Fall
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| (Session 1) | (Session 2) |
2024 |  |  |
2023 |  |  |
2022 |  |  |
2021 |  |  |
2020 |  |  |
2019 |  |  |
2018 |  |  |
2017 |  |  |
2016 |  |  |
2015 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/36 |  |
2014 |  |  |
2013 |  |  |
2012 |  |  |
2011 |  |  |
2010 |  |  |
2009 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/110 |  |
2008 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 10/110 |  | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 1/1
2007 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 2/100 |  |
2006 |  |  |
2005 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 14/6720 |  |
2004 |  |  |
2003 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 25/5120 |  |
2002 | Semicond Power Devices (3c) Seats Taken: 0/1500 |  |
2001 | Semicond Power Devices (3c) Tat-Sing Chow Seats Taken: 15/1525 |  |
2000 |  |  |
1999 | Semicond Power Dev (3c) Tat-Sing Chow Seats Taken: 14/30 |  |
1998 |  |  |